PART |
Description |
Maker |
SPM5001 |
GaAs MMICs RF Double Balanced Mixer
|
SANYO
|
BGA420 |
Silicon MMICs - 20dB LNA, 0...3GHz, 50Ohm, SOT343
|
Infineon
|
BGA416 |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 RF Cascode Amplifier
|
INFINEON[Infineon Technologies AG]
|
BGB540 |
Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BGB420 BGB420E6327 |
Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
MA4EX1201-1300 MA4EX1201-1300T |
GaAs MMIC Double Balanced 11-15 GHz Mixer GaAs MMIC双平衡混频器11-15千兆
|
Lattice Semiconductor, Corp. GSI Technology, Inc.
|
LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
TG2206F |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC MIMIX[Mimix Broadband]
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|